An IGBT, or Insulated Gate Bipolar Transistor, is a three-terminal semiconductor device that combines the characteristics of MOSFETs and BJTs to act as a highly efficient electronic switch.

Key Characteristics (The Hybrid Advantage)

• MOSFET Input: It incorporates the isolated gate of a Field Effect Transistor (FET), which makes it very easy to drive. Only a small voltage is needed to turn it on.
• BJT Output: It possesses the high current, low saturation voltage, and very low ON-state resistance (RON) of a BJT, allowing it to handle significant power with minimal loss.
• Key Features: Its defining characteristics are fast switching and high efficiency, making it a go-to component for modern power systems.

Primary Applications

The IGBT is a unidirectional device used in medium to ultra-high power applications. Its forward blocking action is similar to that of a MOSFET. You can find it in electric cars, variable frequency drives (VFDs) for motors, and power inverters where both high speed and high power are critical.

The IGBT gets its easy-to-drive input from a MOSFET. Now, let’s look at the MOSFET itself, a device that dominates the world of digital electronics.